A single chip SiGe BiCMOS transceiver and SiGe power amplifier for 5.8 GHz WDCT applications

Author

Reimann, Reinhard ; Krimmer, Gerald ; Bischof, Werner ; Gerlach, Stefan

Author_Institution

Atmel, Heilbronn, Germany

fYear

2005

fDate

12-17 June 2005

Abstract

A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel´s SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; demodulators; low noise amplifiers; mobile handsets; phase locked loops; transceivers; voltage-controlled oscillators; 5.8 GHz; BiCMOS transceiver; PLL; RF transceiver; SiGe; WDCT applications; cordless telephone systems; digital demodulator; fully integrated VCO; lithium battery; low noise amplifier; low-IF receiver; power amplifier; BiCMOS integrated circuits; Demodulation; Germanium silicon alloys; Low-noise amplifiers; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516715

Filename

1516715