Growth of InGaAs quantum dots by metal organic chemical vapour deposition

In_0.5Ga_0.5As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without AsH₃ are found to cause a bimodal distribution in the dots, however a small amount of AsH₃ during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In_0.5Ga_0.5As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.