Title :
Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The author presents a detailed two-dimensional numerical simulation study on the performance degradation caused by the extrinsic base encroachment in advanced narrow-emitter bipolar circuits. It is shown that depending on the circuit families used, the extrinsic base encroachment results in distinct effects on the operation and performance of the circuits. The design considerations and scaling implications for saturating and nonsaturating circuits are discussed, using basic inverter and NTL (non-threshold-logic) as examples.<>
Keywords :
bipolar integrated circuits; bipolar transistors; digital simulation; integrated logic circuits; semiconductor device models; semiconductor technology; NTL; advanced narrow-emitter bipolar circuits; basic inverter; design considerations; extrinsic base encroachment; logic circuits; modelling; non-threshold-logic; nonsaturating circuits; operation; performance; performance degradation; saturating circuits; scaling implications; two-dimensional numerical simulation study; Bipolar transistors; Capacitance; Circuit simulation; Degradation; Delay effects; Logic design; Logic devices; Numerical simulation; Pulse inverters; Transient analysis;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32875
