Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits

Author

Chuang, C.T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

554

Lastpage

557

Abstract

The author presents a detailed two-dimensional numerical simulation study on the performance degradation caused by the extrinsic base encroachment in advanced narrow-emitter bipolar circuits. It is shown that depending on the circuit families used, the extrinsic base encroachment results in distinct effects on the operation and performance of the circuits. The design considerations and scaling implications for saturating and nonsaturating circuits are discussed, using basic inverter and NTL (non-threshold-logic) as examples.<>

Keywords

bipolar integrated circuits; bipolar transistors; digital simulation; integrated logic circuits; semiconductor device models; semiconductor technology; NTL; advanced narrow-emitter bipolar circuits; basic inverter; design considerations; extrinsic base encroachment; logic circuits; modelling; non-threshold-logic; nonsaturating circuits; operation; performance; performance degradation; saturating circuits; scaling implications; two-dimensional numerical simulation study; Bipolar transistors; Capacitance; Circuit simulation; Degradation; Delay effects; Logic design; Logic devices; Numerical simulation; Pulse inverters; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32875

Filename

32875