Title :
An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
Author :
Chuang, H.M. ; Lin, Kawuu W. ; Chen, C.Y. ; Chen, J.Y. ; Kao, C.I. ; Liu, W.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0 V. Therefore, the studied device provides the promise for microwave circuit applications.
Keywords :
III-V semiconductors; electric admittance; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; 2.0 V; DC-PHEMT; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor; channel thickness; device characteristics; double InGaAs layers; frequency response; high forward gate-source voltage; microwave circuit applications; microwave operation regimes; transconductance; Electron mobility; Frequency response; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Microwave devices; Microwave transistors; PHEMTs; Transconductance;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237255
