• DocumentCode
    2154591
  • Title

    Cat-CVD as a new fabrication technology of semiconductor devices

  • Author

    Matsumura, Hideki ; Izumi, Akira ; Masuda, Atsushi

  • Author_Institution
    Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
  • fYear
    2002
  • fDate
    11-13 Dec. 2002
  • Firstpage
    323
  • Lastpage
    328
  • Abstract
    Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.
  • Keywords
    catalysis; chemical vapour deposition; semiconductor thin films; Cat-CVD; catalytic cracking reactions; conventional plasma enhanced CVD; decomposition; fabrication technology; gas molecules; heated catalyzer; hot-wire CVD; plasma decomposition; semiconductor devices; substrate temperatures; Fabrication; Plasma applications; Plasma chemistry; Plasma devices; Plasma displays; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Thin film circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    0-7803-7571-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2002.1237256
  • Filename
    1237256