Title :
A high-g low-voltage HARPSS tunable capacitor
Author :
Monajemi, Pejman ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper reports on the design, fabrication and testing of a low-voltage, high-g one-port tunable capacitor in single wafer low-resistivity silicon substrate for RF filtering applications. The tuning range of the parallel plate capacitor is measured to be 2:1 for a range of 2.5-5pF with a tuning voltage of only 2V. The electrical quality factor (g) of a 1 mm × 1.5mm, 60μm thick capacitor with a gap of 1 μm was measured to be 99 at 400MHz and 49 at 1GHz and the return loss was below 0.5dB. The self-resonance frequency is above 10GHz.
Keywords :
Q-factor; UHF filters; capacitors; low-power electronics; micromechanical devices; microwave filters; silicon; tuning; 1 GHz; 1 micron; 1 mm; 1.5 mm; 2 V; 2.5 to 5 pF; 400 MHz; 60 micron; HARPSS; RF filtering applications; electrical quality factor; high-g tunable capacitor; low-voltage tubale capacitor; parallel plate capacitor; Capacitors; Fabrication; Filtering; Loss measurement; Q factor; Radio frequency; Silicon; Testing; Tuning; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516720
