Title :
Using SiO2 nanoparticles to efficiently enhance light emission from metal-oxide silicon tunneling diodes on Si
Author :
Lin, Ching-Fuh ; Huang, Wu-Ping ; Liang, Eih-Zhe ; Su, Ting-Wien ; Hsieh, Hsing-Hung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 μm) with external quantum efficiency 1.5×10-4 has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.
Keywords :
MIS devices; electroluminescence; elemental semiconductors; energy gap; etching; nanoparticles; nanotechnology; potassium compounds; silicon; silicon compounds; tunnel diodes; KOH; KOH wet etch; Si; SiO2 nanoparticles; carrier accumulation region; electroluminescence; electron confinement; external quantum efficiency; frequency response; hole confinement; light emission enhancement; metal-oxide silicon tunneling diodes; metal-oxide-silicon tunneling diodes; nonradiative recombination center; oxide layer; radiative recombination rate; silicon band edge; silicon dioxide nanoparticles; tunneling current; Carrier confinement; Charge carrier processes; Diodes; Electroluminescence; Nanoparticles; Radiative recombination; Silicon compounds; Spontaneous emission; Tunneling; Wet etching;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237257
