DocumentCode :
2154633
Title :
Porous silicon: A photonic material for all seasons
Author :
Reece, P.J. ; Lerondel, G. ; Zheng, W.H. ; Bruyant, A. ; Gal, M.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
333
Lastpage :
336
Abstract :
Porous silicon has a number of demonstrated optical properties that are ideal for a broad range of applications in photonics and optoelectronics research. Technologies based on the tunability of the optical properties of porous silicon such as the refractive index and the ability to grow monolithic multi-layered structures has emerged as new focus of research. In this paper we report on developments relating to porous silicon based microcavities and Bragg reflectors, which have significant implications for a diverse range of applications. Fabrication of a one-dimensional photonic crystal with photonic band-gap is demonstrated. We have also fabricated microcavity structures that exhibit cavity resonances with sub-nanometer line-widths and very high Q-factors (> 7300). Such structures could be useful as both passive and active devices such as narrow bandpass filters and environmental sensors.
Keywords :
elemental semiconductors; infrared spectra; micro-optics; microcavities; mirrors; optical fabrication; optical multilayers; photonic band gap; photonic crystals; porous semiconductors; silicon; Bragg reflectors; Q-factors; Si; cavity resonances; microcavities; microcavity structures fabrication; monolithic multilayered structures; narrow bandpass filters; one-dimensional photonic crystal; optical properties; optoelectronics research; photonic bandgap; photonic material; porous silicon; refractive index; subnanometer linewidths; tunability; Fabrication; Microcavities; Optical filters; Optical materials; Optical refraction; Optical sensors; Optical variables control; Photonic crystals; Refractive index; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237258
Filename :
1237258
Link To Document :
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