Title :
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing
Author :
Gibbons, J.F. ; King, C.A. ; Hoyt, Judy L. ; Noble, D.B. ; Gronet, C.M. ; Scott, M.P. ; Rosner, S.J. ; Reid, Gillian ; Laderman, S. ; Nauka, K. ; Turner, Jessica
Author_Institution :
Stanford Electron. Lab., CA, USA
Abstract :
The DC performance of Si/Si/sub 1-x/Ge heterojunction bipolar transistors (HBTs) fabricated from epitaxial layers grown by limited reaction processing is presented. The highest gain ( approximately=400) device has a 20-nm, 31%-Ge base heavily doped with boron to a level of 7*10/sup 18/ cm/sup -3/. Measurements of the collector current as a function of temperature yield values of the valence band discontinuity, Delta E/sub v/, for four different Ge compositions. The dependence of Delta E/sub v/ on Si/sub 1-x/Ge/sub x/ layer thickness was also measured and found to decrease as strain relaxation occurred.<>
Keywords :
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor junctions; semiconductor materials; semiconductor technology; silicon; 20 nm; DC performance; Si-Si/sub 1-x/Ge/sub x/; collector current; epitaxial layers; gain; heterojunction bipolar transistors; limited reaction processing; strain relaxation; strained layer; valence band discontinuity; Boron; Doping; Epitaxial layers; Fabrication; Heterojunction bipolar transistors; Implants; Metastasis; Rapid thermal processing; Strain measurement; Thickness measurement;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32878
