Analysis of ADVANTOXTM thin BOX SIMOX-SOI material

Wafer quality and cost have been of concern for introduction of SOI technology into commercial applications such as low voltage/power CMOS electronics. Low dose SIMOX-SOI is a prime candidate to address these concerns, having reduced manufacturing cost and potentially higher material quality. A limitation of the low dose SIMOX-SOI has been the continuity and integrity of the thin buried oxide (BOX) layer, particularly the pinhole densities. This work reports characteristics of a new low pinhole thin BOX SIMOX-SOI material. The material is fabricated using variation of implantation energies, working in an energy regime below that of typical standard SIMOX-SOI processes (i.e. <180-200 keV), yielding a silicon layer thickness of 170 nm and a BOX layer thickness of 115 nm. Material characteristics including impurity content, silicon dislocation densities, and HF defect and pinhole densities, have been measured and are presented