Fabrication of p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system

Author

Taft, R.C. ; Plummer, James D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

570

Lastpage

573

Abstract

The first operational BICFET (bipolar-inversion-channel field-effect transistor) structures based on the Ge/sub x/Si/sub 1-x//Si system have been demonstrated. The 300 K current gains of beta >300 are believed to be the highest values reported for a BICFET in any material system to date. The device structure, fabrication, and electrical performance are presented. It is concluded that due to its small vertical dimensions and ability to scale laterally, this device shows promise for both discrete and VLSI high-speed applications.<>

Keywords

Ge-Si alloys; elemental semiconductors; field effect transistors; heterojunction bipolar transistors; integrated circuit technology; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor junctions; semiconductor materials; semiconductor technology; silicon; 300 K; BICFET; Ge/sub x/Si/sub 1-x/-Si; bipolar-inversion-channel field-effect transistor; current gains; device structure; electrical performance; fabrication; scaling; small vertical dimensions; Computer simulation; Conducting materials; Doping profiles; FETs; Fabrication; Molecular beam epitaxial growth; Photonic band gap; Silicon; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32879

Filename

32879