DocumentCode
2154868
Title
New buried gate GTO structure having large safe operating area
Author
Satou, Y. ; Yatsuo, T. ; Sakurada, S.
Author_Institution
Hitachi Ltd., Ibaraki, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
606
Lastpage
609
Abstract
A novel structure for a buried gate GTO (gate turn-off thyristor) is proposed, and the SOA (safe operating area) of a test sample GTO is investigated both experimentally and with a simple calculation. The SOA is expanded by the fine mesh pattern of the buried layer. The spike voltage at the limit of turn-off is thereby increased to 1000 V.<>
Keywords
semiconductor device models; thyristors; 1 kV; SOA; buried gate GTO structure; buried layer fine mesh pattern; gate turn-off thyristor; large safe operating area; limit of turn-off; test sample GTO; Breakdown voltage; Capacitors; Cathodes; Circuits; Impurities; Inverters; Semiconductor optical amplifiers; Snubbers; Testing; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32887
Filename
32887
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