Title :
New buried gate GTO structure having large safe operating area
Author :
Satou, Y. ; Yatsuo, T. ; Sakurada, S.
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
A novel structure for a buried gate GTO (gate turn-off thyristor) is proposed, and the SOA (safe operating area) of a test sample GTO is investigated both experimentally and with a simple calculation. The SOA is expanded by the fine mesh pattern of the buried layer. The spike voltage at the limit of turn-off is thereby increased to 1000 V.<>
Keywords :
semiconductor device models; thyristors; 1 kV; SOA; buried gate GTO structure; buried layer fine mesh pattern; gate turn-off thyristor; large safe operating area; limit of turn-off; test sample GTO; Breakdown voltage; Capacitors; Cathodes; Circuits; Impurities; Inverters; Semiconductor optical amplifiers; Snubbers; Testing; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32887
