Title :
High frequency 6000 V double gate GTOs
Author :
Ogura, T. ; Nakagawa, A. ; Takigami, K. ; Atsuta, M. ; Kamei, Y.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A double-gate GTO (gate turn-off thyristor), consisting of an n-buffer layer and a second gate on the n-buffer, has been developed to achieve low turn-off losses in high-blocking-voltage GTOs. A forward blocking voltage of 6000 V was realized, even at 150 degrees C, when the second gate was shorted to the anode electrode. Turn-on and turn-off switching power loss can be reduced to approximately 1/20 of that for a single-gate GTO by adjusting the time interval between the two gate pulse triggering times for the first and second gates.<>
Keywords :
thyristors; 150 C; 6 kV; double-gate GTO; forward blocking voltage; gate turn-off thyristor; high frequency GTO; high-blocking-voltage GTOs; low turn-off losses; turn on switching power loss; turn-off switching power loss; Anodes; Electrodes; Frequency; Pulse width modulation inverters; Research and development; Space vector pulse width modulation; Switching loss; Temperature; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32888
