DocumentCode
2154922
Title
On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)
Author
Chuang, H.M. ; Lin, K.W. ; Chen, C.Y. ; Chen, J.Y. ; Kao, C.I. ; Liu, W.C.
Author_Institution
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
361
Lastpage
364
Abstract
An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied. In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave dc performances with flat and wide operation regime.
Keywords
III-V semiconductors; energy gap; gallium arsenide; impact ionisation; indium compounds; microwave field effect transistors; nanotechnology; semiconductor heterojunctions; CDC-HFET; InGaAs channel; InGaAs layer; InGaAs-GaAs; channel quantization effect; dc performances; effective energy-gap; impact ionization effect; microwave performances; n-GaAs channel; n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor; Breakdown voltage; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Leakage current; MODFETs; Microwave transistors; Performance gain; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237265
Filename
1237265
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