Evaluation of diffusion barrier layers in Cu interconnects

Author

Prasad, K. ; Yuan, X.L. ; Li, C.Y. ; Kumar, Rakesh

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

373

Lastpage

376

Abstract

In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.

Keywords

copper; copper compounds; dielectric thin films; diffusion barriers; electric breakdown; optical interconnections; permittivity; silicon compounds; Cu based interconnect structure; Cu diffusion; Cu-SiCN; Cu-SiCO; Cu-SiN; capping layer; dielectric breakdown strength; dielectric constant; diffusion barrier layers; interlevel dielectric layer; nitrogen containing SiC; oxygen containing SiC; Adhesives; Conductivity; Copper; Dielectric constant; Dielectric materials; Nitrogen; Resists; Semiconductor films; Silicon carbide; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237268

Filename

1237268