Title :
Simulation and modeling for soft recovery of p-i-n rectifiers
Author :
Mayaram, K. ; Tien, B. ; Hu, C. ; Pederson, D.O.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.<>
Keywords :
p-i-n diodes; semiconductor device models; solid-state rectifiers; analytical model; circuit simulator; coupled device simulation; experimental data; fast-switching p-i-n rectifiers; inductive voltage spike; modeling; numerical simulations; soft recovery; softness factor; unclamped reverse recovery; Analytical models; Circuit simulation; Codecs; Computational modeling; Coupling circuits; Numerical models; PIN photodiodes; Rectifiers; Semiconductor diodes; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32891
