Schottky diodes with thin film diamond base

Author

Gildenblat, G.S. ; Grot, S.A. ; Wronski, C.R. ; Hicks, M.C. ; Badzian, A.R. ; Badzian, T. ; Messier, R.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

626

Lastpage

629

Abstract

Schottky diodes were fabricated using metal contacts to thin diamond films obtained by a plasma-enhanced chemical vapor deposition process. The diamond structure of the films was confirmed by X-ray diffraction patterns and Raman scattering spectra. Internal photoemission measurements were used to determine a barrier height of about 1.13 eV for both Au and Al contacts to p-type diamond films. Rectifying diode characteristics were obtained at both room and elevated temperatures with the breakdown voltage exceeding 200 V at 300 K. It is shown that both static and small-signal characteristics of Schottky diodes with a thin diamond base are controlled by deep acceptor centers and are essentially the same as for their counterparts fabricated using bulk diamond.<>

Keywords

Schottky-barrier diodes; chemical vapour deposition; diamond; elemental semiconductors; semiconductor growth; semiconductor technology; semiconductor thin films; semiconductor-metal boundaries; 1.13 eV; 200 V; 300 K; Al-C; Au-C; DC characteristics; Raman scattering spectra; Schottky diodes; X-ray diffraction patterns; barrier height; breakdown voltage; deep acceptor centers; diamond structure; elevated temperatures; metal contacts; microwave PECVD; p-type diamond films; photoemission measurements; plasma-enhanced chemical vapor deposition; polycrystalline C films; semiconductors; small-signal characteristics; static characteristics; thin diamond base; thin diamond films; thin film diamond base; Chemical vapor deposition; Photoelectricity; Plasma chemistry; Plasma measurements; Plasma properties; Plasma x-ray sources; Raman scattering; Schottky diodes; Transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32892

Filename

32892