DocumentCode :
2155054
Title :
A new InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors
Author :
Tsai, M.K. ; Wu, Y.W. ; Tan, S.W. ; Chu, M.Y. ; Chen, W.T. ; Yang, Y.J. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
389
Lastpage :
392
Abstract :
This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 μm In0.5Ga0.5P bulk layer and a 0.06 μm Al0.45Ga0.55As/GaAs digital graded superlattice (DGSL) layer. The CEHBT´s exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor heterojunctions; semiconductor superlattices; .04 μm In0.5Ga0.5P bulk layer; 0.04 mum; 0.06 μm Al0.45Ga0.55As/GaAs digital graded superlattice layer; 0.06 mum; 0.87 mV; 1.27 V; 55 mV; Al0.45Ga0.55As-GaAs; CEHBT; In0.5Ga0.5P; InGaP-AlGaAs-GaAs; InGaP/AlGaAs abrupt-emitter HBT; InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors; base-emitter turn-on voltage; collector-emitter offset voltage; passivation layer; Conducting materials; Consumer products; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Passivation; Photonic band gap; Superlattices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237272
Filename :
1237272
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2155054
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