DocumentCode
2155073
Title
Thermal noise modeling of nano-scale MOSFETs for mixed-signal and RF applications
Author
Chih-Hung Chen ; Chen, D. ; Lee, Razak ; Peiming Lei ; Wan, Dong
Author_Institution
Adv. Technol. Dev. Div., United Microelectron. Corp., Hsinchu, Taiwan
fYear
2013
fDate
22-25 Sept. 2013
Firstpage
1
Lastpage
8
Abstract
This paper presents the thermal noise in nano-scale MOSFETs - from measurement, characterization, modeling, and potential technology enhancement for future low power, mixed-signal, and radio-frequency (RF) applications. Experimental data from five CMOS technology nodes, namely 180 nm, 130 nm, 90 nm, 65 nm, and 40 nm nodes are presented and discussed.
Keywords
MOSFET; nanotechnology; semiconductor device models; thermal noise; CMOS technology; RF application; mixed-signal application; nanoscale MOSFET; radio frequency application; size 130 nm; size 40 nm; size 65 nm; size 80 nm; size 90 nm; technology enhancement; thermal noise modeling; Integrated circuit modeling; Logic gates; MOSFET; Noise; Noise measurement; Receivers; Thermal noise; RF circuit; channel thermal noise; low-noise technology; mixed-signal circuit; nano-scale MOSFETs; thermal noise characterization; thermal noise modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location
San Jose, CA
Type
conf
DOI
10.1109/CICC.2013.6658426
Filename
6658426
Link To Document