Title :
Analysis of geometrical magnetoresistance Al0.35Ga0.65N/GaN MODFETs
Author :
Umana-Membreno, G.A. ; Dell, J.M. ; Parish, G. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA, Australia
Abstract :
Geometrical magnetoresistance measurements can be used to obtain mobility and carrier concentration in field effect transistor structures. While easily implemented, the accuracy of extracted parameters can be adversely affected by high parasitic resistance rising from ohmic contacts and/or ungated channel access regions. We present here a parameter extraction method for MODFET structures that, accounts for parasitic elements, allowing accurate extraction of mobility-concentration profiles. To demonstrate the applicability of the method, and the deleterious effect of series resistance, we apply the method to an Al0.35Ga0.65N/GaN MODFET and compare, the results obtained to those obtained by neglecting the effect of parasitic contact resistance.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; contact resistance; electron mobility; gallium compounds; high electron mobility transistors; magnetoresistance; ohmic contacts; two-dimensional electron gas; wide band gap semiconductors; Al0.35Ga0.65N-GaN; Al0.35Ga0.65N/GaN MODFETs; carrier concentration; field effect transistor structures; geometrical magnetoresistance; high parasitic resistance; mobility; mobility-concentration profiles; ohmic contacts; parameter extraction method; parasitic contact resistance; series resistance; ungated channel access regions; Contact resistance; Electrical resistance measurement; FETs; HEMTs; MODFETs; Magnetic analysis; Magnetic field measurement; Magnetoresistance; Ohmic contacts; Parameter extraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237273
