A kinetic model for anomalous diffusion during post-implant annealing

Author

Crandle, T.L. ; Richardson, W.B. ; Mulvaney, B.J.

Author_Institution

Microelectron. & Comput. Technol. Corp., Austin, TX, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

636

Lastpage

639

Abstract

The authors present a framework for modeling anomalous diffusion during postimplant rapid thermal annealing. The model combines a detailed Monte Carlo calculation of the buildup of damage to the silicon substrate during the implant with a new kinetic model for impurity and defect diffusion. The formulation also predicts the experimentally observed decay of the anomalous diffusion. The model shows good agreement with experimental data for transient diffusion of phosphorus and boron.<>

Keywords

Monte Carlo methods; annealing; boron; diffusion in solids; elemental semiconductors; phosphorus; semiconductor doping; silicon; Monte Carlo calculation; RTA; Si:B; Si:P; anomalous diffusion; buildup of damage; defect diffusion; experimental data; experimentally observed decay; kinetic model; post-implant annealing; rapid thermal annealing; transient diffusion; Boron; Implants; Impurities; Ion implantation; Kinetic theory; Lattices; Monte Carlo methods; Rapid thermal annealing; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32894

Filename

32894

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155080