Title :
A kinetic model for anomalous diffusion during post-implant annealing
Author :
Crandle, T.L. ; Richardson, W.B. ; Mulvaney, B.J.
Author_Institution :
Microelectron. & Comput. Technol. Corp., Austin, TX, USA
Abstract :
The authors present a framework for modeling anomalous diffusion during postimplant rapid thermal annealing. The model combines a detailed Monte Carlo calculation of the buildup of damage to the silicon substrate during the implant with a new kinetic model for impurity and defect diffusion. The formulation also predicts the experimentally observed decay of the anomalous diffusion. The model shows good agreement with experimental data for transient diffusion of phosphorus and boron.<>
Keywords :
Monte Carlo methods; annealing; boron; diffusion in solids; elemental semiconductors; phosphorus; semiconductor doping; silicon; Monte Carlo calculation; RTA; Si:B; Si:P; anomalous diffusion; buildup of damage; defect diffusion; experimental data; experimentally observed decay; kinetic model; post-implant annealing; rapid thermal annealing; transient diffusion; Boron; Implants; Impurities; Ion implantation; Kinetic theory; Lattices; Monte Carlo methods; Rapid thermal annealing; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32894
