Title :
High breakdown InGaP/InGaAs tunneling real space transfer HEMT
Author :
Chen, YewWei ; Hsu, Wei-Chou
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition. Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; negative resistance; negative resistance devices; semiconductor device breakdown; semiconductor doping; semiconductor growth; tunnelling; InGaP-InGaAs-AlGaAs; N-shaped negative differential resistance; TRST-HEMT; hot electrons real-space transfer; low-pressure metal organic chemical vapor deposition; three-terminal on-state breakdown voltage; tunneling real space transfer HEMT; two-terminal gate-to-drain breakdown voltage; Chemical vapor deposition; Electric breakdown; Electrodes; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Organic chemicals; Tunneling;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237275
