Title :
Ion implantation model considering crystal structure effects
Author :
Hane, M. ; Fukuma, M.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
An ion implantation model for crystalline targets, based on the Monte Carlo method, is proposed. Crystal structure effects on ion channeling are directly modeled by taking into account simultaneous collisions with multitarget atoms. The model can reproduce an experimental boron distribution profile in crystalline silicon. Some important effects on distribution profile, such as thermal lattice vibrations, tilted implantation, and surface imperfection, have been investigated. It is found that a subchannelling effect is important in determining the boron distribution profile.<>
Keywords :
Monte Carlo methods; boron; elemental semiconductors; impurity distribution; ion implantation; semiconductor doping; silicon; B; Monte Carlo method; Si crystal; Si:B implantation; crystal structure effects; crystalline targets; distribution profile; ion channeling; ion implantation model; many body interaction; semiconductors; simultaneous collisions with multitarget atoms; subchannelling effect; surface imperfection; thermal lattice vibrations; tilted implantation; Boron; Crystallization; Energy loss; Ion implantation; Laboratories; Lattices; Microelectronics; Particle scattering; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32897
