Ion implantation model considering crystal structure effects

Author

Hane, M. ; Fukuma, M.

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

648

Lastpage

651

Abstract

An ion implantation model for crystalline targets, based on the Monte Carlo method, is proposed. Crystal structure effects on ion channeling are directly modeled by taking into account simultaneous collisions with multitarget atoms. The model can reproduce an experimental boron distribution profile in crystalline silicon. Some important effects on distribution profile, such as thermal lattice vibrations, tilted implantation, and surface imperfection, have been investigated. It is found that a subchannelling effect is important in determining the boron distribution profile.<>

Keywords

Monte Carlo methods; boron; elemental semiconductors; impurity distribution; ion implantation; semiconductor doping; silicon; B; Monte Carlo method; Si crystal; Si:B implantation; crystal structure effects; crystalline targets; distribution profile; ion channeling; ion implantation model; many body interaction; semiconductors; simultaneous collisions with multitarget atoms; subchannelling effect; surface imperfection; thermal lattice vibrations; tilted implantation; Boron; Crystallization; Energy loss; Ion implantation; Laboratories; Lattices; Microelectronics; Particle scattering; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32897

Filename

32897