Title :
A 28V over 300 W GaAs heterojunction FET with dual field-modulating-plates for W-CDMA base stations
Author :
Ishikura, K. ; Takenaka, I. ; Takahashi, H. ; Kanamori, M. ; Hasegawa, K. ; Asano, K.
Author_Institution :
NEC Compound Semicond. Devices, Ltd., Shiga, Japan
Abstract :
This report presents an L/S-band over 300 W GaAs heterojunction FETs (HJFETs) amplifier for 28V operation. We employed "dual field-modulating-plates (dual-FP) technology", in which one of the FP electrodes is connected to the gate and the other to the ground. The newly developed push-pull amplifier, with four dual-FPFET chips, demonstrated 55.1dBm (320W) CW output power with a 14.0dB linear gain and a maximum power-added efficiency (PAE) of 57% at 2.14GHz. Under two-carrier W-CDMA signals, it showed high drain efficiency (nd) of 30% and low IM3 of -37dBc at Pout of 47.5dBm. To our knowledge, this is the best performance ever reported among high power amplifiers for W-CDMA base stations.
Keywords :
III-V semiconductors; UHF integrated circuits; UHF power amplifiers; code division multiple access; differential amplifiers; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 14 dB; 2.14 GHz; 28 V; 30 percent; 300 W; 57 percent; GaAs; HJFET amplifier; W-CDMA base stations; dual field-modulating-plates technology; dual-FP technology; dual-FPFET chips; heterojunction FET; high power amplifiers; high-voltage technique; power FET amplifiers; push-pull amplifier; Base stations; Electrodes; FETs; Gain; Gallium arsenide; Heterojunctions; Multiaccess communication; Operational amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516743
