Title :
W-band metamorphic HEMT with 267 mW output power
Author :
Herrick, Katherine J. ; Brown, Kenneth W. ; Rose, Frederick A. ; Whelan, Colin S. ; Kotce, Jeffrey ; LaRoche, Jeffrey R. ; Zhang, Yiwen
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.
Keywords :
III-V semiconductors; field effect MIMIC; gallium arsenide; millimetre wave power amplifiers; power HEMT; power integrated circuits; 0.15 micron; 267 mW; 90 GHz; GaAs; MHEMT power amplifier; W-band HEMT; metamorphic HEMT; millimeter wave amplifiers; single stage circuits; Etching; Gallium arsenide; Gold; HEMTs; Indium phosphide; Millimeter wave technology; Power amplifiers; Power generation; Substrates; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516748
