Intersubband absorption in GaInNAs/GaAsN quantum wells

Author

Fan, W.J. ; Sun, L. ; Yoon, S.F. ; Zhang, D.H. ; Wang, S.Z. ; Mei, T. ; Lee, P.L.

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

455

Lastpage

457

Abstract

Intersubband absorption, high-resolution X-ray diffraction and photoluminescence were investigated in the n-type Ga_0.7In_0.3N_0.01As_0.99/GaAs_0.998N_0.002 quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 μm were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GalnNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.

Keywords

III-V semiconductors; X-ray diffraction; annealing; effective mass; gallium arsenide; indium compounds; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; wide band gap semiconductors; Ga_0.7In_0.3N_0.01As_0.99-GaAs_0.998N_0.002; GaInNAs/GaAsN quantum wells; SSMBE; X-ray diffraction; annealing; bound-to-continuum absorption peaks; effective mass theory; intersubband absorption; photoluminescence; solid-source molecular beam epitaxy; Annealing; Electromagnetic wave absorption; Gallium arsenide; Infrared spectra; Nitrogen; Photodetectors; Photoluminescence; Plasma sources; Sun; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237288

Filename

1237288