Title :
Optical calibration of electron concentrations in heavily doped n-GaAs films
Author :
Stiens, J. ; Kotov, V. ; Shkerdin, G. ; Borghs, G. ; Vounckx, R.
Author_Institution :
Lab for Micro- & Optoelectronics, Vrije Univ., Brussels, Belgium
Abstract :
An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 × 1018 with accuracies down to 1-2 % by exploiting optical plasma resonance effects.
Keywords :
III-V semiconductors; calibration; carrier density; doping profiles; gallium arsenide; light reflection; measurement by laser beam; optical films; semiconductor doping; semiconductor epitaxial layers; GaAs; electron concentrations; linear reflection measurement; optical calibration; optical plasma resonance effects; semiconductor doping; thin n-GaAs layers; Calibration; Doping; Electron optics; Laser beams; Lenses; Optical films; Optical refraction; Optical sensors; Optical variables control; Photodetectors;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237289
