• DocumentCode
    2155481
  • Title

    Optical calibration of electron concentrations in heavily doped n-GaAs films

  • Author

    Stiens, J. ; Kotov, V. ; Shkerdin, G. ; Borghs, G. ; Vounckx, R.

  • Author_Institution
    Lab for Micro- & Optoelectronics, Vrije Univ., Brussels, Belgium
  • fYear
    2002
  • fDate
    11-13 Dec. 2002
  • Firstpage
    459
  • Lastpage
    462
  • Abstract
    An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 × 1018 with accuracies down to 1-2 % by exploiting optical plasma resonance effects.
  • Keywords
    III-V semiconductors; calibration; carrier density; doping profiles; gallium arsenide; light reflection; measurement by laser beam; optical films; semiconductor doping; semiconductor epitaxial layers; GaAs; electron concentrations; linear reflection measurement; optical calibration; optical plasma resonance effects; semiconductor doping; thin n-GaAs layers; Calibration; Doping; Electron optics; Laser beams; Lenses; Optical films; Optical refraction; Optical sensors; Optical variables control; Photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    0-7803-7571-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2002.1237289
  • Filename
    1237289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155481