Optical induced blueshift of PLE spectrum improvement in n-i-p-i multiple quantum well structures

Author

Xiaohong, Tang ; Chua Soo Jim ; Baolin, Zhang ; Jinyi, Zhu ; Gensheng, Huang

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

463

Lastpage

466

Abstract

A large blue shift in the peak position of the photoluminescence excitation (PLE) spectra of n-i-p-i MQW structures have been observed when the excitation power intensity is varied from /spl sim/ 1 mW/cm/sup 2/ to /spl sim/10 W/cm/sup 2/. With multiple step-quantum wells (MS-QWs), the blue shift is found to be much larger than that of the n-i-p-i MQWs structure with normal rectangular quantum wells. The blue shift is found to be dependent on the excitation intensity I/sup ex/ in the form /spl Delta/h/spl nu//sub max/ - /spl Delta/h/spl nu//sub max/ / 1 + (I/sup ex//I/sup a/)/sup s/.

Keywords

p-n heterojunctions; photoluminescence; semiconductor quantum wells; spectral line shift; PLE spectrum; excitation intensity; n-i-p-i multiple quantum well structures; optical induced blueshift; photoluminescence excitation; Absorption; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical modulation; Optical signal processing; Optical superlattices; Photoluminescence; Quantum well devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Conference_Location

Sydney, NSW, Australia

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237290

Filename

1237290