• DocumentCode
    2155526
  • Title

    Creation of SiGe-based SIMOX structures by low energy oxygen implantation

  • Author

    Ishikawa, Yukari ; Saito, T. ; Shibata, N. ; Fukatsu, S.

  • Author_Institution
    Japan Fine Ceramics Center, Nagoya, Japan
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    Summary form only given. An ultra thin, dislocation-free, SiGe virtual substrate on SiO2 has been demonstrated as a new class of SOI structure by using low energy oxygen implantation. SIMOX-based virtual substrates are expected to boost the electronic as well as optoelectronic potentials of Si/SiGe
  • Keywords
    Ge-Si alloys; SIMOX; integrated circuit technology; ion implantation; oxygen; semiconductor materials; semiconductor-insulator-semiconductor structures; substrates; SOI; SiGe virtual substrate; SiGe-SiO2-SiGe; SiGe-based SIMOX structures; dislocation-free substrate; low energy oxygen implantation; ultra thin virtual substrate; Annealing; Ceramics; Electron mobility; Germanium silicon alloys; Optical scattering; Oxygen; Silicon alloys; Silicon germanium; Substrates; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634910
  • Filename
    634910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155526