Title :
(AlGa)As/(InGa)As strained-quantum-well FETs on silicon dioxide by selective device lift-off as an alternative to heteroepitaxy
Author :
Myers, D.R. ; Klem, J.F. ; Lott, J.A.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
The authors have successfully applied a selective lift-off technique, originally developed for minimally strained (AlGa)As/GaAs films, to transfer 1- mu m-gate-length depletion-mode (AlGa)As/(InGa)As strained-quantum-well field-effect transistors (FETs) from GaAs substrates to glass slides. Peak transconductance of the transistors was unchanged by the transfer. As an alternative to heteroepitaxial growth, this technique provides improved flexibility for the realization of complex hybrid electronic or optoelectronic systems.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; hybrid integrated circuits; indium compounds; integrated circuit technology; silicon compounds; substrates; 1 micron; AlAs release layer; AlGaAs-InGaAs films; SiO/sub 2/ substrate; alternative to heteroepitaxy; combined Si and compound IC technology; depletion-mode; glass slide substrates; hybrid ICs; hybrid OEICs; improved flexibility; selective device lift-off; selective lift-off technique; strained-quantum-well FETs; transconductance; Annealing; Dielectric losses; FETs; Gallium arsenide; Glass; Gold; Semiconductor films; Semiconductor superlattices; Silicon compounds; Substrates;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32910
