Title :
Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown
Author :
Moazzami, R. ; Lee, J. ; Chen, I.-C. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125 degrees C is estimated to be 80 A for 5.5-V operation and 50 A for 3.6-V operation. For the particular technology studies here, 150-AA oxide meets typical reliability specifications for 5.5-V operation, and 80-AA oxide is acceptable for 3.6-V operation (both at 125 degrees C).<>
Keywords :
dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; insulating thin films; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; reliability; semiconductor technology; silicon compounds; 10 y; 125 C; 3.6 V; 5.5 V; 50 to 150 A; SiO/sub 2/ ultrathin films; TDDB; gate dielectrics; gate oxides; intrinsic limit; lifetime; minimum acceptable oxide thickness; reliability specification; thinnest oxide; time-dependent dielectric breakdown; Dielectric breakdown; Instruments; Life estimation; Lifetime estimation; Lifting equipment; MOS devices; Predictive models; Temperature; Virtual manufacturing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32911
