DocumentCode :
2155571
Title :
Absorption of intense terahertz radiation in InAs/AlSb heterojunction
Author :
Cao, J.C. ; Lei, X.L.
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
471
Lastpage :
474
Abstract :
We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It´s indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ´s at the radiation frequency fac = 0.64 THz.
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; impact ionisation; indium compounds; multiphoton processes; semiconductor heterojunctions; submillimetre waves; 0.64 THz; InAs-AlSb; InAs/AlSb heterojunction; electric transport; free-carrier absorption; interband impact ionization; multiphoton channels; multiple photon process; terahertz radiation; Absorption; Charge carrier processes; Chemicals; Electrons; Equations; Frequency; Heterojunctions; Impact ionization; Ionizing radiation; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237292
Filename :
1237292
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2155571
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