Absorption of intense terahertz radiation in InAs/AlSb heterojunction

Author

Cao, J.C. ; Lei, X.L.

Author_Institution

Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

471

Lastpage

474

Abstract

We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It´s indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ´s at the radiation frequency f_ac = 0.64 THz.

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; impact ionisation; indium compounds; multiphoton processes; semiconductor heterojunctions; submillimetre waves; 0.64 THz; InAs-AlSb; InAs/AlSb heterojunction; electric transport; free-carrier absorption; interband impact ionization; multiphoton channels; multiple photon process; terahertz radiation; Absorption; Charge carrier processes; Chemicals; Electrons; Equations; Frequency; Heterojunctions; Impact ionization; Ionizing radiation; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237292

Filename

1237292