Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Author

Stewart, K. ; Buda, M. ; Wong-Leung, J. ; Fu, L. ; Jagadish, C. ; Stiff-Roberts, A. ; Bhattacharya, P.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

475

Lastpage

478

Abstract

In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900°C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.

Keywords

III-V semiconductors; X-ray diffraction; chemical interdiffusion; infrared detectors; ion implantation; molecular beam epitaxial growth; photodetectors; photoluminescence; rapid thermal annealing; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; 60 s; 700 to 900 degC; DCXRD; InAs-GaAs; PL; QDIP devices; RTA; XTEM; cross sectional transmission electron microscopy; double crystal X-ray diffraction; interdiffusion; ion implantation; molecular beam epitaxy; photoluminescence; quantum dot infrared photodetectors; rapid thermal annealing; strain relaxation; Capacitive sensors; Gallium arsenide; Infrared detectors; Ion implantation; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Rapid thermal annealing; Temperature distribution; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237293

Filename

1237293