Optimized copper line aspect ratio by Monte Carlo method

Author

Wang, Zhuo Van ; Du, Gang ; Kang, Jin Feng ; Xiao Yan Liu ; Han, Ruqi

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2252

Lastpage

2255

Abstract

The copper interconnect comes into nanometers with the scaling down of device dimension. At the same time, the resistivity is increasing and the characteristic gets worse. In our paper, an optimal aspect ratio (AR) for Cu-line is found by Monte-Carlo (MC) method so that we can get the optimized electric conductivity and improve the performance of interconnection.

Keywords

Monte Carlo methods; copper; electrical conductivity; grain boundaries; nanoelectronics; optimisation; semiconductor device metallisation; semiconductor device models; semiconductor process modelling; surface roughness; Cu; Monte Carlo method; copper interconnects performance; grain boundary scattering; microelectronic device; optimized copper line aspect ratio; optimized electric conductivity; scaled down device dimension; surface roughness; Acoustic scattering; Conductivity; Copper; Electrons; Grain boundaries; Optimization methods; Phonons; Plasma simulation; Plasma temperature; Rough surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735039

Filename

4735039