DocumentCode
2155625
Title
High performance sputtered/anodized tantalum oxide capacitors
Author
Byeon, S.G. ; Tzeng, Y.
Author_Institution
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
722
Lastpage
725
Abstract
High-performance films (400-1600 AA) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization of sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.<>
Keywords
anodised layers; capacitors; dielectric losses; dielectric thin films; electric strength; integrated circuit technology; sputtered coatings; tantalum compounds; 400 to 1600 A; Ta/sub 2/O/sub 5/ films; breakdown fields; dissipation factors; high-charge-storage capacitor; leakage currents; narrower breakdown distributions; Aluminum; Dielectric measurements; Electric breakdown; Electric variables measurement; Electrodes; Leakage current; MIM capacitors; MOS capacitors; Oxidation; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32914
Filename
32914
Link To Document