Title :
Properties of radiative recombination in GaAsN epilayers
Author :
Sun, B.Q. ; Gal, M. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.
Keywords :
III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; localised states; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; wide band gap semiconductors; GaAsN; GaAsN epilayers; delocalized holes; localized electrons; localized excitons; photoluminescence; radiative recombination; Charge carrier processes; Excitons; Gallium arsenide; Luminescence; Nitrogen; Photoluminescence; Pump lasers; Radiative recombination; Temperature dependence; X-ray lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237295
