Title :
Light emission from LPCVD silicon nanocrystals: the effect of composition and annealing
Author :
Koukos, K. ; Bedel-Pereira, E. ; Bouscayrol, L. ; Scheid, E. ; Gauthier-Lafaye, O. ; Bonnefont, S. ; Sarrabayrouse, G. ; Lozes-Dupuy, F.
Author_Institution :
LAAS-CNRS, Toulouse
Abstract :
This paper discusses the effect of composition and annealing on the light emission of silicon nanocrystals grown by low pressure chemical vapour deposition. Results show that a short period rapid thermal annealing (RTA) step introduced before the conventional annealing significantly enhances the emission properties. RTA increases photoluminescence intensity and narrows the spectral width.
Keywords :
elemental semiconductors; nanostructured materials; photoluminescence; rapid thermal annealing; silicon; spectral line narrowing; Si; annealing; composition effect; light emission; low pressure chemical vapour deposition; photoluminescence intensity; rapid thermal annealing; silicon nanocrystals; spectral width narrowing; Chemical vapor deposition; Crystallization; Dielectric materials; Light sources; Nanocrystals; Optical materials; Photoluminescence; Rapid thermal annealing; Silicon; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386177
