• DocumentCode
    2155673
  • Title

    Structural, electrical and optical properties of MeV As+ ion implanted InP

  • Author

    Carmody, C. ; Tan, H.H. ; Jagadish, C. ; Zou, J. ; Dao, L. ; Gal, M.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2002
  • fDate
    11-13 Dec. 2002
  • Firstpage
    487
  • Lastpage
    490
  • Abstract
    The structural, optical and electrical properties of MeV ion implanted InP were studied as a function of annealing temperature. At high annealing temperatures, the implanted material exhibited picosecond optical responses and sheet resistivities of the order of tens of ohms/square. DCXRD and TEM measurements revealed distinct layers of damage resulting from the implantation.
  • Keywords
    III-V semiconductors; X-ray diffraction; arsenic; crystal structure; electrical resistivity; indium compounds; ion implantation; optical properties; rapid thermal annealing; transmission electron microscopy; As+ ion implantation; DCXRD; InP:As; TEM; annealing temperature; electrical properties; optical properties; picosecond optical responses; sheet resistivities; structural properties; Annealing; Australia; Indium phosphide; Optical materials; Optical microscopy; Particle beam optics; Sheet materials; Temperature; Transmission electron microscopy; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    0-7803-7571-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2002.1237296
  • Filename
    1237296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155673