DocumentCode :
2155713
Title :
65nW CMOS temperature sensor for ultra-low power microsystems
Author :
Seokhyeon Jeong ; Jae-Yoon Sim ; Blaauw, D. ; Sylvester, Dennis
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2013
fDate :
22-25 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
We propose a temperature sensor using a novel process-invariant temperature sensing element and voltage to current converter for battery-operated ultra-low power micro systems. By introducing a new temperature-to-voltage sensing element that outputs only 75mV, the sensor achieves ultra-low power. The sensor was implemented in 180nm CMOS process and uses 0.09mm2 of area. Measurements from test chips show 65nW power consumption, the lowest reported to date, with an inaccuracy of +1.3°C /-1.4°C across 0°C to 100°C after 2-point calibration.
Keywords :
CMOS integrated circuits; calibration; low-power electronics; micromechanical devices; microprocessor chips; power convertors; temperature sensors; 2-point calibration; CMOS temperature sensor; battery-operated ultralow power microsystems; power 65 nW; power consumption; process-invariant temperature sensing element; size 180 nm; temperature-to-voltage sensing element; test chips; voltage 75 mV; voltage-current converter; CMOS integrated circuits; Power demand; Radiation detectors; Resistors; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/CICC.2013.6658447
Filename :
6658447
Link To Document :
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