Title :
Diamond for high power electronics
Author :
Kohn, Erhard ; Kusterer, Joachim ; Denisenko, Andrej
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
The current status and perspective of diamond as wide bandgap semiconductor in microwave power and high temperature electronics is reviewed. Predicted RF power densities above 50 W/mm and diode operation above 1000 °C characterize this extraordinary material. In addition, the properties predistine diamond films also for RF MEMS. A bi-stable in-line switch is discussed.
Keywords :
diamond; high-temperature electronics; micromechanical devices; power semiconductor devices; wide band gap semiconductors; RF MEMS; RF power densities; bistable in-line switch; diamond films; diode operation; high power electronics; high temperatur electronics; microwave power electronics; wide bandgap semiconductor; Boron; Doping; FETs; Nitrogen; Plasma temperature; Radio frequency; Radiofrequency microelectromechanical systems; Semiconductor films; Substrates; Switches;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516767
