Title :
Suppression of interdiffusion in In0.5Ga0.5As/GaAs quantum dots
Author :
Fu, L. ; Lever, P. ; Tan, H.H. ; Jagadish, C. ; Reece, P. ; Gal, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO2) film were deposited onto a In0.5Ga0.5As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO2 film, however the TiO2 film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO2.
Keywords :
III-V semiconductors; chemical interdiffusion; dielectric thin films; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; silicon compounds; thermal stresses; titanium compounds; vapour deposited coatings; In0.5Ga0.5As-GaAs; In0.5Ga0.5As/GaAs quantum dot structure; SiO2 film; SiO2; TiO2; electron beam evaporation; interdiffusion suppression; metallurgical reactions; spin-on glass film; thermal intermixing suppression; thermal stress effect; Annealing; Argon; Atomic force microscopy; Buffer layers; Chemical vapor deposition; Gallium arsenide; MOCVD; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237300
