Title :
Free carrier lifetime measurements in SiGe/Si planar waveguides
Author :
Trita, A. ; Cristiani, I. ; Degiorgio, V. ; Chrastina, D. ; Von Känel, H.
Author_Institution :
Pavia Univ., Pavia
Abstract :
In this paper we report minority carriers lifetime measurements in a set of SiGe/Si planar waveguides fabricated by low-energy plasma enhanced chemical vapour deposition (LEPECVD), a originally developed for microelectronic applications that can be conveniently exploited for photonic applications. Several waveguides have been fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 mum. Lifetimes were measured by generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 mum.
Keywords :
carrier lifetime; high-speed optical techniques; optical planar waveguides; plasma CVD; silicon compounds; LEPECVD technique; SiGe-Si; SiGe-Si planar waveguides; continuous probe beam; electron-hole pair generation; femtosecond laser pulse emission; free carrier lifetime measurements; free-carrier absorption transients; germanium concentration; low-energy plasma enhanced chemical vapour deposition; microelectronic applications; size 200 nm to 2 mum; time 100 fs; wavelength 810 nm; Charge carrier lifetime; Germanium silicon alloys; Optical pulse generation; Planar waveguides; Plasma applications; Plasma chemistry; Plasma measurements; Plasma waves; Pulse measurements; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386183
