Interdiffusion in InGaAs quantum dots by ion implantation

Author

Lever, P. ; Tan, H.H. ; Reece, P. ; Gal, M. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

515

Lastpage

518

Abstract

Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and significant narrowing was seen in the photoluminescence spectra of the implanted and annealed samples. Lower implantation doses were required to create similar energy shifts in quantum dot samples than reported in the quantum well case. The energy shifts and photoluminescence intensities were found to depend on the ions used, as well as the amount of damage created in the samples. Temperature dependent implantations were found to follow the trends reported for quantum wells.

Keywords

III-V semiconductors; arsenic; chemical interdiffusion; gallium arsenide; hydrogen; indium compounds; ion implantation; photoluminescence; rapid thermal annealing; semiconductor quantum dots; InGaAs quantum dots; InGaAs:H,I; annealing; arsenic ions; energy shifts; hydrogen ions; interdiffusion; ion implantation; photoluminescence spectra; Annealing; Gallium arsenide; Hydrogen; Indium gallium arsenide; Ion implantation; Photoluminescence; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237303

Filename

1237303