Title :
Design of lateral IGBT power devices with current sensor
Author :
Liang, Yung C. ; Hor, Vincent
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
MOS-controlled bipolar power devices provide attractive characteristics, such as high current capability, simplicity of low-power gate drive circuitry and fast turn-off characteristics. In this paper, the design of a lateral IGBT with an n+ anode buffer layer and a p+ cathode buried layer is investigated. The influence of several internal parameters on the device performance in terms of forward conduction, turn-off, and breakdown were studied. Initially, a current sensor was incorporated as part of the lateral IGBT device structure with its sensing ability evaluated. The sensor contact is placed near the cathode to sense the lateral current and is able to provide a constant current sensing ratio with respect to the wide changes of operating current density and gate voltage. Small variations of the sensing ratios were maintained over the temperature range of 250 to 450 K
Keywords :
current density; electric current measurement; electric sensing devices; electrical contacts; electrodes; insulated gate bipolar transistors; power bipolar transistors; 250 to 450 K; breakdown; constant current sensing ratio; current sensor; device design; device performance; forward conduction; gate voltage; internal parameters; lateral IGBT power devices; n+ anode buffer layer; operating current density; p+ cathode buried layer; sensor contact; temperature range; turn-off; Anodes; Buffer layers; Cathodes; Circuits; Current density; Electric breakdown; Insulated gate bipolar transistors; Sensor phenomena and characterization; Temperature distribution; Voltage;
Conference_Titel :
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3008-0
DOI :
10.1109/IAS.1995.530412
