DocumentCode
2156030
Title
Monolithic process for co-integration of GaAs and silicon circuits
Author
Shichijo, H. ; Matyi, R.J. ; Taddiken, A.H.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
778
Lastpage
781
Abstract
A monolithic process to co-integrate Si and GaAs circuits on a single chip is described. The co-integration has been realized through the epitaxial growth of a GaAs layer on a prefabricated Si wafer, resulting in a coplanar structure appropriate for IC processing. A composite ring oscillator consisting of Si CMOS and GaAs MESFET inverters connected in a ring was fabricated as a demonstration.<>
Keywords
III-V semiconductors; elemental semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; silicon; GaAs; GaAs MESFET inverters; IC processing; Si; Si CMOS; Si/GaAs circuits cointegration; co-integration; composite ring oscillator; coplanar structure; epitaxial growth; monolithic process; semiconductors; single chip; CMOS process; Circuits; Epitaxial growth; Gallium arsenide; Gold; MESFETs; Plasma temperature; Silicon; Substrates; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32927
Filename
32927
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