Title :
Monolithic process for co-integration of GaAs and silicon circuits
Author :
Shichijo, H. ; Matyi, R.J. ; Taddiken, A.H.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A monolithic process to co-integrate Si and GaAs circuits on a single chip is described. The co-integration has been realized through the epitaxial growth of a GaAs layer on a prefabricated Si wafer, resulting in a coplanar structure appropriate for IC processing. A composite ring oscillator consisting of Si CMOS and GaAs MESFET inverters connected in a ring was fabricated as a demonstration.<>
Keywords :
III-V semiconductors; elemental semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; silicon; GaAs; GaAs MESFET inverters; IC processing; Si; Si CMOS; Si/GaAs circuits cointegration; co-integration; composite ring oscillator; coplanar structure; epitaxial growth; monolithic process; semiconductors; single chip; CMOS process; Circuits; Epitaxial growth; Gallium arsenide; Gold; MESFETs; Plasma temperature; Silicon; Substrates; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32927
