Optimization of macropore silicon morphology etched by photo-electrochemistry

Author

Wang, Guozheng ; Fu, Shencheng ; Gao, Yanjun ; Li, Ye ; Wang, Xin ; Duanmu, Qingduo

Author_Institution

Sch. of Sci., Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2416

Lastpage

2419

Abstract

Macropore silicon etching with photo-electro-chemistry was carried out under different experimental conditions, including etching voltage, current density and wave length of optical source et al. The surface, diameter of pore and wall of the macropore silicon were observed with Scanning Electronic Microscope (SEM) and Metallographic Microscope. The influencing factors on morphology of pore were analyzed. Experimental parameters for fabricating high properties macropore silicon were also determined. Macropore silicon with depth of pores up to 300 Â¿m and aspect ratios more than 75 was etched with photo-electrochemistry.

Keywords

current density; elemental semiconductors; etching; photoelectrochemistry; porous semiconductors; scanning electron microscopy; silicon; surface morphology; Si; aspect ratio; current density; depth 300 mum; etching; macropore silicon morphology; metallographic microscope; optical source wavelength; photoelectrochemistry; scanning electronic microscope; Charge carrier processes; Chemicals; Current density; Electrodes; Etching; Hafnium; Optical surface waves; Scanning electron microscopy; Silicon; Surface morphology; electrochemistry; etching; macropore silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735058

Filename

4735058