Title :
The study of optical properties of Zn1-xMNxSe thin films grown by MOCVD on GaAs substrates
Author :
Lu, S.L. ; Yang, C.L. ; Dai, J.M. ; Hsuang, J.S. ; Ge, W.K. ; Wang, Y.Q. ; Zhang, J.Y. ; Shen, D.Z. ; Wang, J.N.
Author_Institution :
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A series of Zn1-xMnxSe thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; excitons; impurity states; manganese compounds; optical films; photoluminescence; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; time resolved spectra; wide band gap semiconductors; zinc compounds; GaAs; GaAs substrates; MOCVD; X-ray diffraction; Zn1-xMnxSe; Zn1-xMnxSe thin films; band edge; band-to-band excitonic transitions; impurity bound states; localized excitons transitions; metal-organic chemical vapor deposition; photoluminescence spectra; time-resolved PL measurements; Chemical vapor deposition; Crystallization; Impurities; Optical diffraction; Optical films; Photoluminescence; Sputtering; Stimulated emission; X-ray diffraction; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237311
