• DocumentCode
    2156076
  • Title

    The study of optical properties of Zn1-xMNxSe thin films grown by MOCVD on GaAs substrates

  • Author

    Lu, S.L. ; Yang, C.L. ; Dai, J.M. ; Hsuang, J.S. ; Ge, W.K. ; Wang, Y.Q. ; Zhang, J.Y. ; Shen, D.Z. ; Wang, J.N.

  • Author_Institution
    Dept. of Phys., Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2002
  • fDate
    11-13 Dec. 2002
  • Firstpage
    551
  • Lastpage
    554
  • Abstract
    A series of Zn1-xMnxSe thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.
  • Keywords
    II-VI semiconductors; MOCVD; X-ray diffraction; excitons; impurity states; manganese compounds; optical films; photoluminescence; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; time resolved spectra; wide band gap semiconductors; zinc compounds; GaAs; GaAs substrates; MOCVD; X-ray diffraction; Zn1-xMnxSe; Zn1-xMnxSe thin films; band edge; band-to-band excitonic transitions; impurity bound states; localized excitons transitions; metal-organic chemical vapor deposition; photoluminescence spectra; time-resolved PL measurements; Chemical vapor deposition; Crystallization; Impurities; Optical diffraction; Optical films; Photoluminescence; Sputtering; Stimulated emission; X-ray diffraction; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    0-7803-7571-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2002.1237311
  • Filename
    1237311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2156076