Dielectric based antifuse for logic and memory ICs

Author

Hamdy, E. ; McCollum, J. ; Chen, S.-O. ; Chiang, S. ; Eltoukhy, S. ; Chang, J. ; Speers, T. ; Mohsen, A.

Author_Institution

Actel Corp., Sunnyvale, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

786

Lastpage

789

Abstract

The authors describe a programmable low-impedance circuit element (PLICE), which is a dielectric-based antifuse for use in both logic and memory ICs. The antifuse element offers significant size and performance improvement compared to other programmable cells. A simple thermal model has been developed to predict the antifuse resistance. Each antifuse occupies an area of 1.5- mu m/sup 2/ using 1.2- mu m technology. It can be programmed within 1 ms and has a tight resistance distribution centered around 500 Omega . The reliability of both the programmed and unprogrammed states is demonstrated to be better than 40 years. The antifuse was used in the design of the first family of desktop-configurable channeled gate arrays and a 64 K PROM (programmable read-only memory) device.<>

Keywords

PROM; integrated logic circuits; integrated memory circuits; logic arrays; 1.2 micron; 500 ohm; 64 kbit; PROM; antifuse resistance; channeled gate arrays; dielectric-based antifuse; logic IC; memory ICs; monolithic IC; programmable low-impedance circuit element; programmable read-only memory; reliability; thermal model; Computer simulation; Dielectrics; Equations; Logic; Power dissipation; Silicon; Stress; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32929

Filename

32929