• DocumentCode
    2156161
  • Title

    Pillar structured thermal neutron detector

  • Author

    Nikolic, Rebecca J. ; Conway, Adam M. ; Reinhardt, Catherine E. ; Graff, Robert T. ; Wang, Tzu-Fang ; Deo, Nirmalendu ; Cheung, Chin Li

  • Author_Institution
    Lawrence Livermore Nat. Lab., Lawrence, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    2361
  • Lastpage
    2364
  • Abstract
    This work describes an innovative solid state device structure that leverages advanced semiconductor fabrication technology to produce an efficient device for thermal neutron detection which we have coined the ¿Pillar Detector¿. State-of-the-art thermal neutron detectors have shortcomings in simultaneously achieving high efficiency, low operating voltage while maintaining adequate fieldability performance. By using a three dimensional silicon PIN diode pillar array filled with isotopic 10boron (10B), a high efficiency device is theoretically possible. Here we review the design considerations for going from a 2-D to 3-D device and discuss the materials trade-offs. The relationship between the geometrical features and efficiency within our 3-D device is investigated by Monte Carlo radiation transport method coupled with finite element drift-diffusion carrier transport simulations. To benchmark our simulations and validate the predicted efficiency scaling, experimental results of a prototype device are illustrated. The fabricated pillar structures reported in this work are composed of 2 ¿m diameter silicon pillars with a 2 ¿m spacing and pillar height of 12 ¿m. The pillar detector with a 12 ¿m height achieved a thermal neutron detection efficiency of 7.3% at a reverse bias of - 2 V.
  • Keywords
    Monte Carlo methods; finite element analysis; neutron detection; p-i-n diodes; transport processes; 3D silicon PIN diode pillar array; B; Monte Carlo radiation transport method; finite element drift-diffusion carrier transport simulation; pillar structured thermal neutron detector; semiconductor fabrication technology; size 12 mum; size 2 mum; voltage 2 V; Boron; Detectors; Fabrication; Finite element methods; Low voltage; Monte Carlo methods; Neutrons; Silicon; Solid modeling; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4735063
  • Filename
    4735063