Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Author

Uhnevionak, Viktoryia ; Burenkov, Alexander ; Strenger, Christian ; Ortiz, Guillermo ; Bedel-Pereira, Elena ; Mortet, Vincent ; Cristiano, Fuccio ; Bauer, Anton J. ; Pichler, Peter

Author_Institution

Fraunhofer Inst. for Integrated Syst. & Device Technol. IISB, Erlangen, Germany

Volume

62

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

2562

Lastpage

2570

Abstract

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

Keywords

Hall effect; MOSFET; electron mobility; scattering; silicon compounds; technology CAD (electronics); wide band gap semiconductors; Hall factor; Hall-effect measurements; SiC; background doping concentrations; bulk mobility; current-voltage measurements; electrical measurements; electron scattering mechanisms; lateral n-channel SiC MOSFET; numerical TCAD simulations; temperature dependence; transport properties; Current measurement; Doping; MOSFET; Scattering; Silicon carbide; Temperature dependence; Temperature measurement; Electron mobility; Hall effect; SiC MOSFET; scattering mechanisms;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2447216

Filename

7163690