Title :
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Author :
Uhnevionak, Viktoryia ; Burenkov, Alexander ; Strenger, Christian ; Ortiz, Guillermo ; Bedel-Pereira, Elena ; Mortet, Vincent ; Cristiano, Fuccio ; Bauer, Anton J. ; Pichler, Peter
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol. IISB, Erlangen, Germany
Abstract :
The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.
Keywords :
Hall effect; MOSFET; electron mobility; scattering; silicon compounds; technology CAD (electronics); wide band gap semiconductors; Hall factor; Hall-effect measurements; SiC; background doping concentrations; bulk mobility; current-voltage measurements; electrical measurements; electron scattering mechanisms; lateral n-channel SiC MOSFET; numerical TCAD simulations; temperature dependence; transport properties; Current measurement; Doping; MOSFET; Scattering; Silicon carbide; Temperature dependence; Temperature measurement; Electron mobility; Hall effect; SiC MOSFET; scattering mechanisms;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2447216
